1 edition of Time-Resolved Photoluminescence of InAs/GaInSb Quantum Well Lasers found in the catalog.
Time-Resolved Photoluminescence of InAs/GaInSb Quantum Well Lasers
by Storming Media
Written in English
|The Physical Object|
Using time-resolved photoluminescence, we have examined the photoluminescence (PL) decay time of Ga1-yInyP/(AlxGa1-x)1-yInyP single quantum wells with various well widths and different Al content. K. Ryczko's research works with citations and 3, reads, including: M-shaped quantum wells for active region of interband cascade laser.
Results and Discussion. Figure 1a,,b b present examples of room temperature PL spectra collected from the type II AlSb/InAs/GaInSb/InAs/AlSb quantum wells grown on the InAs and GaSb substrates, respectively. The observed PL linewidth for both is about 40–60 meV, being of the order of thermally broadened line of 2 k B T width. The PL response, with a hot carrier emission contribution. A measurement method has been developed that can estimate carrier lifetimes and internal quantum efficiency (IQE) in semiconductor materials at room temperature. From the analysis of time-resolved photoluminescence (TRPL) response based on the carrier rate equation, the physical meaning of the TRPL response is clarified and expressions for.
Optical properties of modified type II W-shaped quantum wells have been investigated with the aim to be utilized in interband cascade lasers. The results show that introducing a tensely strained GaAsSb layer, instead of a commonly used compressively strained GaInSb, allows employing the active transition involving valence band states with a significant admixture of the light holes. Researches in the field of III-V semiconductor photonic devices have initiate applications in a number of disciplines including lighting, optical communications and biomedical engineering. One of the limiting factors for getting better the photonic devices is the carrier relaxation time. This is the time obligatory for energetic carriers to cool to the edge of their particular bands in a bulk.
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Time-Resolved Photoluminescence of Inas/Gainsb Quantum Well Lasers Paperback – Novem by Michael R. Mckay (Author) See Author: Michael R. McKay.
Therefore, to optimize performance, we have studied Schockley-Read-Hall (SRH), radiative and Auger recombination rates in mid-infrared laser structures using time-resolved photoluminescence employing frequency upconversion. The three devices studied here were multi-period InAs/GaInSb quantum-well structures emitting atand : Michael R.
McKay. High spatial resolution time‐resolved photoluminescence has been used to study GaInAs/GaInAsP quantum‐well structures selectively Time-Resolved Photoluminescence of InAs/GaInSb Quantum Well Lasers book using the pulsed photoabsorption‐induced disordering technique. Photoluminescence decay measurements at wavelengths ≳ μm were obtained using novel high‐efficiency photon‐counting detectors and were found to correlate spatially with the Cited by: The authors report photoluminescence (PL), time-resolved PL, and PL excitation expts.
on InAs/GaAs quantum dots (QDs) of different size as a function of temp. Both the inhomogeneous properties of the ensemble and the intrinsic properties of single QDs are important in understanding the temp.-dependence of the optical : Akio Higo, Takayuki Kiba, Junichi Takayama, Chang Yong Lee, Cedric Thomas, Takuya Ozaki, Hassanet So.
Abstract: Research in the field of mid-wave infrared (MWIR) semiconductor photonic devices has led to applications in a variety of disciplines including atmospheric monitoring, optical communications, non-invasive glucose testing for diabetics, and infrared (IR) countermeasures.
One of the limiting factors for improving the modulation rates of MWIR devices is the carrier relaxation time. Figure 1 a presents the band alignment of the InAs-based type II AlSb/InAs/GaInSb/InAs/AlSb quantum well together with the latticed-matched spacing layer made of GaAs Sb The valence band edge of such layer is approx.
meV below the valence band of GaSb (see Fig. 1 b). It has been shown before that GaSb-based structures with a GaSb spacing layer exhibit a nonradiative recombination.
The photoluminescence (PL), its temperature and power dependences have been studied in InAs quantum dots (QDs) embedded in the symmetric In Ga As/GaAs quantum well (QW) with QDs grown at different temperatures (– °C).
The ground state (GS) PL peaks shift with increasing QD growth temperatures: the red shift is observed when temperature increased from. Fig. 1 shows room temperature Fourier transformed photoreflectance (blue line) and photoluminescence (red line) spectra of a typical W-shaped sample consisting of GaSb/AlSb( nm)/InAs( nm)/GaInSb( nm)/InAs( nm)/AlSb( nm)/GaSb( nm) five times repeated for an enhancement of the optical response.
The PL peak is associated with the fundamental transition in. This study investigated the effects of the number of stacking layers (S) on the optical properties of InAs/InGaAs sub-monolayer quantum dot (SML-QD) infrared photodetectors by photoluminescence S was increased from two to six, the room temperature PL emission energies were redshifted remarkably (~84 meV) and the full width at half maximum was.
Photoluminescence (PL) for InAs quantum dots (QDs) capped by GaAs 1-x Sb x (x = and ). Band alignment transition from type-I to type-II due to Sb-composition change from x = to x = in the GaAs 1-x Sb x layer. Distinct energy state filling, thermal activation, quenching, and lifetime for carriers in the QDs.
Time-resolved optical characterization of InAs/InGaAs quantum. No Comments. Optical characterization of the quantum capacitance detector.
A time-delayed MIR laser pulse from a free-electron laser, tuned to the intersubband transition energy of the quantum well, induces temporal quenching of the PL intensity with subsequent recovery. In that respect, the idea to employ the so-called interband cascade lasers (ICLs) utilizing type II InAs/GaInSb quantum wells in the active region [7, 8] is very promising.
One of the advantages of this solution is the ease of spectral tunability achieved via variation of the thickness of the conduction-band-well. 1. Introduction.
As it was originally proposed intype II quantum wells (QWs) of a broken gap material system such as InAs and Ga(In)Sb are suitable for the active region of the so called interband cascade lasers (ICLs). They have already been proven as very prospective and efficient light sources in the mid infrared including the range of 3–4 μm where they can well compete with.
We report direct experimental evidence of the collective super-radiant mode in Bragg structure containing 60 InAs monolayer-based quantum wells (QWs) periodically arranged in GaAs matrix.
Time-resolved photoluminescence measurements reveal an appearance of the additional super-radiant mode, originated from coherent collective interaction of QWs. Mid-infrared semiconductor lasers are being developed by the Air Force for a variety of applications.
Carrier dynamics have been shown to be a strong indicator of laser performance in such devices. This work investigates laser efficiency by studying the carrier dynamics in InAsSb/InAlAsSb type-I and InAs/GaInSb type-II quantum-well laser structures using time-resolved photoluminescence (PL.
Time-resolved photoluminescence measurements are carried out for InAs quantum dots (QDs) coupled through a GaAs barrier to an InGaAs quantum well (QW). It is found that decay time of photoluminescence response from the QW is significantly shortened when compared to a reference sample only containing a QW with similar parameters while the decay time of photoluminescence.
Photoluminescence (PL) is investigated as a function of the excitation intensity and temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well thicknesses of 7 and 15 nm, respectively.
At low temperature, interface fluctuations result in the 7-nm QW PL exhibiting a blueshift of 15 meV, a narrowing of the linewidth (full width at half maximum, FWHM) from to We investigate the carrier dynamics in self-assembled InAs/GaAs quantum dots under strictly resonant excitation of the ground state.
The spectral selectivity of the resonant excitation allows us to study the physical properties of a class of dots characterized by an energy distribution comparable to the excitation laser spectrum. We detect no Stokes shift of the photoluminescence (PL) line. In this paper a review of recent progress in the development of this material system is given, including the demonstration of multi-quantum well samples exhibiting photoluminescence up to room temperature, and laser diodes operating up to K.
Book Search tips Selecting this option will search all publications across the Scitation platform Selecting this option will search all Time-resolved photoluminescence sample grown at a higher growth rate, we observed a longer luminescence lifetime, which was attributed to an improved quantum well.Strained quantum‐well diode lasers emitting at μm have been fabricated.
time-resolved, photoluminescence upconversion to region of a mid-infrared diode laser. The InAs/GaInSb/InAs.Researchers at MIT Lincoln Laboratories have recently demonstrated mid-infrared InAs/GaInSb multiple quantum well lasers optimized for 80K operation and for optical pumping with high-power 2-micron diode lasers.
The efficiency of these lasers depends on the rapid transfer of carriers into the wells from the thick GaInAsSb barrier regions, which serve as separate absorbers for the pump.